Nanoscale semiconductor devices represent an important sector whose applications in the VLSI design have led to revolutionary advancements in nano-electronic circuits and systems due to improved electronic properties. Nano- semiconductor devices are the potential devices for VLSI circuits and system applications and are highly preferred in novel nanoscale devices due to their high mobility and high driving capacity. Although, currently, the knowledge and resources for the fabrication of nanodevices are limited; however, International Technology Road Map for Semiconductors (ITRS) has predicted that the conventional fabrication flow can be used for the nanoscale devices, specifically nanowires, with advancement of technology.

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